EBSD技术，以及拥有着更高分辨率的TKD技术，在半导体和微电子工业中有诸多不同的应用。许多材料的电性能与它们的微观组织，特别是晶粒尺寸、织构和界面性能，有着内在的联系。仅凭EBSD或TKD分析，就可以提供所有需要的信息，其分辨率适合除最细微的纳米结构外的所有的纳米结构。也许，在这领域里，最常见的应用是在电子封装，例如：焊锡凸块或引线键合的表征。EBSD还可用于测量薄膜中位错的密度和类型（例如，用于发电和发光二极管应用的II-VI族半导体中的线位错），或提高我们对存储设备中的纳米结构的理解。EBSD和TKD在这个领域的应用案例包括：
相分布图（Cu—红色，Sn—深蓝，Ni—浅蓝，Ag3Sn—黄色，Cu3Sn—橙色，η-Cu6Sn5—绿色
取向图（IPF-Z着色方案），突出Cu和Ni的重合点阵（CSL）晶界。
This application note provides several brief examples of the use of the EBSD technique and, in particular, the Symmetry S2 detector and the AZtecCrystal data processing software, for the effective characterisation of microstructures in a range of microelectronics samples.
This application note describes a method of combining Oxford Instrument’s OmniProbe tools and AZtec EBSD system for the manipulation and analysis of a 5μm diameter gold microelectronic wire sample.
Semiconductor failure analysis requires painstaking detective work to understand the source of failures so that they can be removed from volume production. Discover how Oxford Instruments solutions can enable you to overcome these and other challenges.
Find out how electron microscopy can be combined with light and scanning-probe microscopy analyses on the identical positions in order to investigate structure-property relationships in optoelectronic devices and how all parts of a Li-ion battery can be characterised.
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